Módulo de 62 mm com trincheira rápida/fieldstop igbt e diodo de recuperação rápida
$4550-499 Piece/Pieces
$38≥500Piece/Pieces
Tipo de pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CIF,CFR |
transporte: | Ocean,Land,Express,Others |
porta: | SHANGHAI |
$4550-499 Piece/Pieces
$38≥500Piece/Pieces
Tipo de pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CIF,CFR |
transporte: | Ocean,Land,Express,Others |
porta: | SHANGHAI |
Modelo: YZPST-P150HFN120AT1R6
marca: Yzpst
Lugar De Origem: China
VcEs: 1200V
VGEs: ±20V
Lc: 150A
CRM: 300A
Ptot: 1500W
VcE(sat: 2.2V
VgE(th: 2.5V
Unidades de venda | : | Piece/Pieces |
Tipo de pacote | : | 1. Embalagem anti-eletrostática 2. Caixa de caixa 3. trança |
Baixar | : |
P/N: YZPST-P150HFN120AT1R6
Módulo de 62 mm com vala rápida/fieldstop IGBT e Rápido Recuperação Diodo
Características
■ Perdas baixas de comutação
■ Baixo vcesal
■ VCE baixo (SAT com coeficiente de temperatura positivo
Formulários
■ Motor de unidades
Sistemas UPS
■ inversor de alta potência
Esquema de circuito equivalente
IGBT -Inversor
Valores nominados máximos
Symbol |
Description |
Conditions |
Values |
Unit |
VcEs |
Collector-Emitter Voltage |
Tv=25℃ |
1200 |
V |
VGEs |
Gate-Emitter Peak Voltage |
Ty=25℃ |
±20 |
V |
lc |
Continuous DC Collector Current |
Tc=100℃ |
150 |
A |
CRM |
Repetitive Peak Collector Current |
tp=1ms |
300 |
A |
Ptot |
Total Power Dissipation |
Tc=25℃,Tyjmax=175℃ |
1500 |
W |
Symbol | Values | |||||
Description | Conditions | Min. | Typ. | Max. | Unit | |
VcE(sat | Collector-Emitter Saturation Voltage | VcE=15V,Ic=150A,Tv=25℃ | 2.2 | V | ||
Vge=15V,Ic=150A,Tv=125℃ | 2.5 | V | ||||
VgE(th | Gate Threshold Voltage | VgE=VcE,Ic=3.8mA | 5 | 5.8 | 6.5 | V |
IcEs | Collector-Emitter Cut-Off Current | VcE=1200V,VgE=0V | mA | |||
GES | Gate-Emitter Leakage Current | VcE=20V,VcE=0V | 600 | nA | ||
RGint | Internal Gate Resistor | Ty=25℃ | 3.8 | Ω | ||
Cies | Input Capacitance | 11.5 | nF | |||
Coes | Output Capacitance | Vce=25V,Vce=0V,f=1MHz | 1 | nF | ||
Cres | Reverse Transfer Capacitance | 0.4 | nF | |||
tt(on) | Turn-on Delay Time | 139 | ns | |||
Vcc=600V | ||||||
t | Turn-on Rise Time | VoE=±15V | 37 | nS | ||
d(a) | Turn-off Delay Time | Ic=150A | 192 | nS | ||
t | Turn-off Fall Time | Rg=2.0g | 128 | nS | ||
Eon | Turn-on Switching Loss | Inductive Load | 7.9 | -= | mJ | |
E₀ff | Turn-off Switching Loss | Ty=25℃ | 8.4 | mJ | ||
Isc | Short Circuit Data | VcE≤15V,Vcc=600V | 518 | A | ||
tp≤10μs,Tv=25℃ | ||||||
Thermal Resistance,Junction to Case | Per IGBT | —-- | 0.1 | —-- | K/W | |
Twop | Virtual Junction Temperature | Under Switching | -40 | 150 | ℃ |
Diodo -Inversor
Máximo Valores classificados
Symbol |
Description |
Conditions |
Values |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
Tv=25℃ |
1200 |
V |
lF |
Continuous DC Forward Current |
|
150 |
A |
lFRM |
Repetitive Peak Collector Current |
tp=1ms |
300 |
A |
Valores característicos
Symbol | Values | |||||
Description | Conditions | Min. | Typ | Max. | Unit | |
Forward Voltage | lr=150A,Vse=0V,Tv=25℃ | 2.5 | V | |||
VF | l=150A,Vge=0V,Tv=125℃ | 1.9 | —-- | V | ||
RM | Peak Reverse Recovery Current | —-- | 42 | A | ||
Qr | Recovered Charge | l=150A,Vg=600V,Vge=-15V | 3.1 | uC | ||
Erec | Reverse Recovery Energy | Ty=25℃ | 1.1 | mJ | ||
Tuop | Virtual Junction Temperature | Under Switching | -40 | 150 | ℃ |
Esboços de pacote (mm)
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.