Capacidade de alta circuito de curto -circuito 650V Módulo de potência IGBT 200A
$3310-99 Piece/Pieces
$25≥100Piece/Pieces
Tipo de pagamento: | L/C,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Land |
porta: | SHANGHAI |
Modelo: YZPST-SKM195GB066D
marca: Yzpst
Lugar De Origem: China
VCES: 650V
IC: 200A
ICRM: 400A
VGES: ±20V
Ptot: 695W
Unidades de venda | : | Piece/Pieces |
Tipo de pacote | : | 1. Embalagem anti-eletrostática 2. Caixa de caixa 3. trança |
Exemplo de imagem | : | |
Baixar | : |
Módulo de potência IGBT Tipo: YZPST-SKM195GB066D
Formulários
Inversor para acionamento de motor
Amplificador de acionamento de servo AC e CC
UPS (fontes de alimentação ininterruptas)
Máquina de soldagem de comutação suave
Características
VCE baixo (SAT) com tecnologia de parada de campo
VCE (SAT) com coeficiente de temperatura positivo
Incluindo recuperação rápida e suave anti-paralela FWD
Alta capacidade de curto -circuito (10us)
Estrutura do módulo de baixa indutância
Temperatura máxima da junção 175 ℃
Absoluto Máximo Classificações
Parameter |
Symbol |
Conditions |
Value |
Unit |
Collector-Emitter Voltage |
VCES |
VGE=0V, IC =1mA, Tvj=25℃ |
650 |
V |
Continuous Collector Current |
IC |
Tc=100℃ |
200 |
A |
Peak Collector Current |
ICRM |
tp=1ms |
400 |
A |
Gate-Emitter Voltage |
VGES |
Tvj=25℃ |
±20 |
V |
Total Power Dissipation (IGBT-inverter) |
Ptot |
Tc=25℃ Tvjmax=175℃ |
695 |
W |
Características IGBT
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Gate-Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =3.2mA,Tvj=25℃ | 5.1 | 5.8 | 6.3 | V |
VCE=650V,VGE=0V, Tvj=25℃ | 1 | mA | ||||
Collector-Emitter Cut-off Current | ICES | VCE=650V,VGE=0V, Tvj=125℃ | 5 | mA | ||
Collector-Emitter | Ic=200A,VGE=15V, Tvj=25℃ | 1.45 | 1.95 | V | ||
Saturation Voltage | VCE(sat) | Ic=200A,VGE=15V, Tvj=125℃ | 1.65 | V | ||
Input Capacitance | Cies | VCE=25V,VGE =0V, | 12.3 | nF | ||
Reverse Transfer Capacitance | Cres | f=1MHz, Tvj=25℃ | 0.37 | nF | ||
Internal Gate Resistance | Rgint | 1 | Ω | |||
Turn-on Delay Time | td(on) | 48 | Ns | |||
Rise Time | tr | IC =200 A | 48 | Ns | ||
Turn-off Delay Ttime | td(off) | VCE =300 V | 348 | Ns | ||
Fall Time | tf | VGE = ±15V | 58 | Ns | ||
Energy Dissipation During Turn-on Time | Eon | RG = 3.6Ω | 2.32 | mJ | ||
Energy Dissipation During Turn-off Time | Eoff | Tvj=25℃ | 5.85 | mJ | ||
Turn-on Delay Time | td(on) | 48 | Ns | |||
Rise Time | tr | IC =200 A | 48 | Ns | ||
Turn-off Delay Time | td(off) | VCE = 300V | 364 | Ns | ||
Fall Time | tf | VGE = ±15V | 102 | Ns | ||
Energy Dissipation During Turn-on Time | Eon | RG =3.6Ω | 3.08 | mJ | ||
Energy Dissipation During Turn-off Time | Eoff | Tvj=125℃ | 7.92 | mJ | ||
SC Data | Isc | Tp≤10us,VGE=15V,Tvj=150℃ , Vcc=300V,VCEM≤650V | 1000 | A |
Características do diodo
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Diode DC Forward Current | IF | Tc=100℃ | 200 | A | ||
Diode Peak Forward Current | IFRM | 400 | A | |||
IF=200A,Tvj=25℃ | 1.55 | 1.95 | V | |||
Forward Voltage | VF | IF=200A,Tvj=125℃ | 1.5 | V |
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Recovered Charge | Qrr | 8.05 | uC | |||
IF =200 A | ||||||
VR=300V | ||||||
Peak Reverse Recovery Current | Irr | -diF/dt =4200A/us | 148 | A | ||
Reverse Recovery Energy | Erec | Tvj=25℃ | 1.94 | mJ | ||
Recovered Charge | Qrr | 16.9 | uC | |||
IF =200 A | ||||||
VR=300V | ||||||
Peak Reverse Recovery Current | Irr | -diF/dt =4200A/us | 186 | A | ||
Reverse Recovery Energy | Erec | Tvj=125℃ | 3.75 | mJ |
Módulo Characteri STICS T C = 25 ° C, a menos que especificado de outra forma
Parameter | Symbol | Conditions | Value | Unit | ||
Min. | Typ. | Max. | ||||
Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V | ||
Maximum Junction Temperature | Tjmax | 150 | ℃ | |||
Operating Junction Temperature | Tvj op | -40 | 125 | ℃ | ||
Storage Temperature | Tstg | -40 | 125 | ℃ | ||
per IGBT-inverter | 0.19 | K/W | ||||
Junction-to Case | R θjc | per Diode-inverter | 0.31 | K/W | ||
Case to Sink | R θcs | Conductive grease applied | 0.085 | K/W | ||
Module ElectrodesTorque | Mt | Recommended(M5) | 2.5 | 5 | N · m | |
Module-to-SinkTorque | Ms | Recommended(M6) | 3 | 5 | N · m | |
Weight of Module | G | 150 | g |
Pacote Dimensões
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