$2950-499 Piece/Pieces
$19.5≥500Piece/Pieces
| Tipo de pagamento: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| transporte: | Ocean,Land |
| porta: | SHANGHAI |
Modelo: YZPST-G100HF120D1
Lugar De Origem: China
VCES: 1200V
VGES: ±30V
IC TC = 25°C: 200A
IC TC = 100°C: 100A
ICM: 200A
PD: 430W
Tsc: > 10us
TJ: 150°C
| Unidades de venda | : | Piece/Pieces |
| Tipo de pacote | : | 1. Embalagem anti-eletrostática 2. Caixa de caixa 3. trança |
| Baixar | : |
|
Sistemas UPS
Classificações máximas absolutas de IGBT
| VCES | Collector to Emitter Voltage | 1200 | V | |
| VGES | Continuous Gate to Emitter Voltage | ±30 | V | |
| TC = 25°C | 200 | |||
| IC | Continuous Collector Current | TC = 100°C | 100 | A |
| ICM | Pulse Collector Current | TJ = 150°C | 200 | A |
| PD | Maximum Power Dissipation (IGBT) | TC = 25°C, | 430 | W |
| tsc | > 10 | µs | ||
| Short Circuit Withstand Time | ||||
| Maximum IGBT Junction Temperature | 150 | °C | ||
| TJ | ||||
| TJOP | ||||
| Maximum Operating Junction Temperature Range | -40 to +150 | °C | ||
| Tstg | Storage Temperature Range | -40 to +125 | °C | |
| VRRM | Repetitive Peak Reverse Voltage Preliminary Data | 1200 | V | |
| TC = 25°C | 200 | |||
| IF | Diode Continuous Forward Current | TC = 100°C | 100 | A |
| IFM | Diode Maximum Forward Current | 200 | A | |
Absoluto Máximo Classificações de roda livre Diodo
| VRRM | Repetitive Peak Reverse Voltage Preliminary Data | 1200 | V | |
| TC = 25°C | 200 | |||
| IF | Diode Continuous Forward Current | TC = 100°C | 100 | A |
| IFM | Diode Maximum Forward Current | 200 | A | |
Características de comutação do IGBT
| td(on) | TJ = 25°C | 30 | |||||
| Turn-on Delay Time | ns | ||||||
| TJ = 125°C | 35 | ||||||
| TJ = 25°C | 50 | ||||||
| tr | Turn-on Rise Time | TJ = 125°C | 55 | ns | |||
| TJ = 25°C | 380 | ||||||
| td(off) | Turn-off Delay Time | TJ = 125°C | 390 | ns | |||
| TJ = 25°C | 110 | ||||||
| tf | Turn-off Fall Time | TJ = 125°C | 160 | ns | |||
| VCC = 600V | TJ = 25°C | 4.6 | |||||
| Eon | Turn-on Switching Loss | IC = 100A | TJ = 125°C | 5.7 | mJ | ||
| RG = 5.6Ω | TJ = 25°C | 3.1 | |||||
| Eoff | Turn-off Switching Loss | VGE = ±15V | TJ = 125°C | 5.1 | mJ | ||
| Qg | Total Gate Charge | Inductive Load | TJ = 25°C | 870 | nC | ||
| Rgint | Integrated gate resistor | f = 1M; | TJ = 25°C | 1.9 | Ω | ||
| Vpp = 1V | |||||||
| Cies | Input Capacitance | TJ = 25°C | 8 | ||||
| VCE = 25V | |||||||
| Coes | Output Capacitance | VGE = 0V | TJ = 25°C | 1.35 | nF | ||
| Cres | Reverse Transfer | f = 1MHz | TJ = 25°C | 0.81 | |||
| Capacitance | |||||||
| RθJC | Thermal Resistance, Junction-to-Case (IGBT) | 0.29 | °C/W | ||||
Pacote Dimensão
Número De Telefone: 86-514-87782298
Whatsapp: +8613805278321
Endereço: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
site: https://pt.yzpst.com
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