Controle de Potência de Tiristores de Alta Potência 100A
obtenha o ultimo preçoTipo de pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
porta: | Shanghai |
Tipo de pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
porta: | Shanghai |
Modelo: YZPST-TO94-KP100A06
marca: YZPST
Tipo de pacote | : | 1. Embalagem anti-eletrostática 2. Caixa de papelão 3. Embalagem protetora de plástico |
Baixar | : |
Tiristor de Controle de Fase
YZPST-TO94-KP100A06
Características do tiristor de controle de fase: 1. todo o projeto fiffused 2. capacidades de alta corrente 3. altas capacidades de corrente de surto 4. altas taxas de voltagem 5. alta DV / DT 6. baixa corrente de porta 7. portão dinâmico 8. baixa impedância térmica. As aplicações típicas do tiristor de alta potência é que o módulo possui acionamentos de alta potência, controle de motor CC, fontes de alimentação de alta tensão, comutação de energia média e fontes de alimentação CC.
Classificações e características máximas
Symbol |
Parameter |
Values |
Units |
Test Conditions |
|
ON-STATE |
|
|
|
||
ITAV |
Mean on-state current |
- |
A |
Sinewave,180° conduction,Tc=100°C |
|
ITRMS |
RMS value of on-state current |
100 |
A |
Nominal value |
|
ITSM |
Peak one cycle surge (non repetitive) current |
900 |
A |
10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 °C |
|
I2t |
I square t |
4050 |
A2s |
8.3 msec and 10.0 msec |
|
IL |
Latching current |
100 |
mA |
VD = 12 V; RL= 12 ohms |
|
IH |
Holding current |
30 |
mA |
VD = 12 V; I = 1 A |
|
VTM |
Peak on-state voltage |
2.0 |
V |
ITM = 150 A; Duty cycle £ 0.01%; Tj = 25 °C
|
|
di/dt |
Critical rate of rise of on-state current |
non-repetitive |
300 |
A/ms |
Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM |
repetitive |
50 |
||||
BLOCKING |
|
|
|
||
VDRM VRRM |
Repetitive peak off state voltage Repetitive peak reverse voltage |
600 |
V |
|
|
VDSM VRSM |
Non repetitive peak off state voltage Non repetitive peak reverse voltage |
700 |
V |
|
|
IDRM IRRM |
Repetitive peak off state current Repetitive peak reverse current |
10 |
mA |
Tj = 125 °C ,VRRM VDRM applied |
|
dV/dt |
Critical rate of voltage rise |
100 |
V/ms |
TJ=TJmax, linear to 80% rated VDRM |
|
TRIGGEING |
|
|
|
||
PG(AV) |
Average gate power dissipation |
- |
W |
|
|
PGM |
Peak gate power dissipation |
- |
W |
|
|
IGM |
Peak gate current |
- |
A |
|
|
IGT |
Gate trigger current |
200 |
mA |
TC = 25 °C |
|
VGT |
Gate trigger voltage |
3.0 |
V |
TC = 25 °C |
|
VT(T0) |
Treshold voltage |
1 |
V |
|
|
rT |
Slope resistance |
2.4 |
mΩ |
|
|
VGD |
Gate non-trigger voltage |
0.2 |
V |
Tj = 125 °C |
|
SWITCHING |
|
|
|
||
tq |
Turn-off time |
- |
ms |
Tj = 125 °C |
|
td |
Delay time |
- |
Gate current 1A, di/dt=1A/μs, Vd=0.67%VDRM, TJ=25 °C |
||
Qrr |
Reverse recovery charge |
- |
|
|
Térmica e Mecânica
Symbol |
Parameter |
Values |
Units |
Test Conditions |
Tj |
Operating temperature |
-40~125 |
°C |
|
Tstg |
Storage temperature |
-40~150 |
°C |
|
R th (j-c) |
Thermal resistance - junction to case |
0.4 |
°C/W |
DC operation ,Single sided cooled |
R th (c-s) |
Thermal resistance - case to sink |
0.08 |
°C/W |
Single sided cooled |
P |
Mounting force |
- |
Nm |
|
W |
Weight |
- |
g |
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