Tiristor de parafuso prisioneiro tipo KP300A1600V ST330S16

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

I_TAV

Mean on-state current

330

A

Sinewave,180° conduction,Tc=75℃

I_TRMS

RMS value of on-state current

520

A

Nominal value

I_TSM

Peak one cycle surge

(non repetitive) current

9000

A

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I²t

I square t

405

KA²s

8.3 msec and 10.0 msec

I_L

Latching current

1000

mA

V_D = 24 V; R_L= 12 ohms

I_H

Holding current

600

mA

V_{D =} 24 V; I = 2.5 A

V_TM

Peak on-state voltage

1.51

V

I_TM = 1040 A; Duty cycle £ 0.01%

di/dt

Critical rate of rise

of on-state current

non-repetitive

1000

A/ms

T_j =100 ^oC V _D= 1/2V_DRM, I_TM=(2x I_TAV) A

Gate pulse:t_w≥20μs, tr≤0.5μs f_G=50Hz

I_GM≥5 I_GT

repetitive

-

BLOCKING

V_DRM

V_RRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

1600

V

V_DSM

V_RSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

1700

V

I_DRM

I_RRM

Repetitive peak off state current Repetitive peak reverse  current

50

mA

T_j = 100 ^oC ,V_RRM V_DRM applied

dV/dt

Critical rate of voltage rise

500

V/ms

T_j = 100 ^oC V_D =0.67 V_DRM  Gate open

TRIGGEING

P_G(AV)

Average gate power dissipation

2.0

W

P_GM

Peak gate power dissipation

10

W

I_GM

Peak gate current

3.0

A

I_GT

Gate trigger current

200

mA

T_C = 25 ^oC

V_GT

Gate trigger voltage

3.0

V

T_C = 25 ^oC

V_GD

Gate non-trigger voltage

0.25

V

T_j = 125 ^oC

SWITCHING

t_q

Turn-off time

100

ms

Q_rr

Reverse recovery charge

-