Módulo IGBT
YZPST-450HFX170C6S
1700V/450A 2 em uma embalagem
Descrição geral
O módulo de potência IGBT fornece Ultra
baixa perda de condução, bem como robustez de curto -circuito.
Eles foram projetados para aplicativos como
inversores e ups gerais.
Características
Tecnologia IGBT com baixa TCE (SAT)
Capacidade de curto -circuito de 10μs
VCE (SAT) com coeficiente de temperatura positivo
Temperatura máxima de junção 175oc
Caso de baixa indutância
Recuperação rápida e suave Recuperação anti-paralela FWD
Placa de base de cobre isolada usando a tecnologia DBC
Típica Formulários
Inversor para acionamento de motor
Amplificador de acionamento de servo AC e CC
Fonte de energia ininterrupta
IGBT
|
Symbol
|
Description
|
Value
|
Unit
|
|
VCES
|
Collector-Emitter Voltage
|
1700
|
V
|
|
VGES
|
Gate-Emitter Voltage
|
±20
|
V
|
|
IC
|
Collector Current @ TC=25oC
@ TC= 100oC
|
706
450
|
A
|
|
ICM
|
Pulsed Collector Current tp=1ms
|
900
|
A
|
|
PD
|
 Maximum Power Dissipation @ T =175oC
|
2542
|
W
|
Diodo
|
Symbol
|
Description
|
Value
|
Unit
|
|
VRRM
|
Repetitive Peak Reverse Voltage
|
1700
|
V
|
|
IF
|
Diode Continuous Forward Current
|
450
|
A
|
|
IFM
|
Diode Maximum Forward Current tp=1ms
|
900
|
A
|
Módulo
|
Symbol
|
Description
|
Value
|
Unit
|
|
Tjmax
|
Maximum Junction Temperature
|
175
|
oC
|
|
Tjop
|
Operating Junction Temperature
|
-40 to +150
|
oC
|
|
TSTG
|
Storage Temperature Range
|
-40 to +125
|
oC
|
|
VISO
|
Isolation Voltage RMS,f=50Hz,t=1min
|
4000
|
V
|
IGBT Características Tc = 25oC, a menos que seja indicado de outra forma
|
Symbol
|
Parameter
|
Test Conditions
|
Min.
|
Typ.
|
Max.
|
Unit
|
|
|
|
IC=450A,VGE=15V, Tj=25oC
|
|
1.85
|
2.2
|
|
|
|
|
|
|
VCE(sat)
|
Collector to Emitter
|
IC=450A,VGE=15V, Tj=125oC
|
|
2.25
|
|
V
|
|
|
Saturation Voltage
|
IC=450A,VGE=15V, Tj=150oC
|
|
2.35
|
|
|
|
VGE(th)
|
Gate-Emitter Threshold Voltage
|
IC= 18.0mA,VCE=VGE, Tj=25oC
|
5.6
|
6.2
|
6.8
|
V
|
|
ICES
|
Collector Cut-Off
|
VCE=VCES,VGE=0V,
|
|
|
5
|
mA
|
|
Current
|
Tj=25oC
|
|
IGES
|
Gate-Emitter Leakage Current
|
VGE=VGES,VCE=0V, Tj=25oC
|
|
|
400
|
nA
|
|
RGint
|
Internal Gate Resistance
|
|
|
1.67
|
|
Ω
|
|
Cies
|
Input Capacitance
|
VCE=25V,f=1MHz,
|
|
54.2
|
|
nF
|
|
Cres
|
Reverse Transfer
|
VGE=0V
|
|
1.32
|
|
nF
|
|
Capacitance
|
|
|
QG
|
Gate Charge
|
VGE=- 15…+15V
|
|
4.24
|
|
μC
|
|
td(on)
|
Turn-On Delay Time
|
|
|
179
|
|
ns
|
|
tr
|
Rise Time
|
|
|
105
|
|
ns
|
|
td(off)
|
Turn-Off Delay Time
|
VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj=25oC
|
|
680
|
|
ns
|
|
tf
|
Fall Time
|
|
|
375
|
|
ns
|
|
Eon
|
Turn-On Switching
|
|
|
116
|
|
mJ
|
|
Loss
|
|
|
Eoff
|
Turn-Off Switching
|
|
|
113
|
|
mJ
|
|
Loss
|
|
|
td(on)
|
Turn-On Delay Time
|
|
|
208
|
|
ns
|
|
tr
|
Rise Time
|
|
|
120
|
|
ns
|
|
td(off)
|
Turn-Off Delay Time
|
VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj= 125oC
|
|
784
|
|
ns
|
|
tf
|
Fall Time
|
|
|
613
|
|
ns
|
|
Eon
|
Turn-On Switching
|
|
|
152
|
|
mJ
|
|
Loss
|
|
|
Eoff
|
Turn-Off Switching
|
|
|
171
|
|
mJ
|
|
Loss
|
|
|
td(on)
|
Turn-On Delay Time
|
|
|
208
|
|
ns
|
|
tr
|
Rise Time
|
|
|
120
|
|
ns
|
|
td(off)
|
Turn-Off Delay Time
|
VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj= 150oC
|
|
800
|
|
ns
|
|
tf
|
Fall Time
|
|
|
720
|
|
ns
|
|
Eon
|
Turn-On Switching
|
|
|
167
|
|
mJ
|
|
Loss
|
|
|
Eoff
|
Turn-Off Switching
|
|
|
179
|
|
mJ
|
|
Loss
|
|
|
|
|
tP≤10μs,VGE=15V,
|
|
|
|
|
|
ISC
|
SC Data
|
Tj=150oC,VCC= 1000V, VCEM≤1700V
|
1800
|
A
|
Diodo Características Tc = 25oC, a menos que seja indicado de outra forma
|
Symbol
|
Parameter
|
Test Conditions
|
Min.
|
Typ.
|
Max.
|
Unit
|
|
|
Diode Forward
|
IF=450A,VGE=0V,Tj=25oC
|
|
1.8
|
2.25
|
|
|
VF
|
Voltage
|
IF=450A,VGE=0V,Tj= 125oC
|
|
1.95
|
|
V
|
|
|
|
IF=450A,VGE=0V,Tj= 150oC
|
|
1.9
|
|
|
|
Qr
|
Recovered Charge
|
VR=900V,IF=450A,
|
|
105
|
|
μC
|
|
IRM
|
Peak Reverse
|
-di/dt=4580A/μs,VGE=- 15V Tj=25oC
|
|
198
|
|
A
|
|
Recovery Current
|
|
|
Erec
|
Reverse Recovery Energy
|
|
|
69
|
|
mJ
|
|
Qr
|
Recovered Charge
|
VR=900V,IF=450A,
|
|
187
|
|
μC
|
|
IRM
|
Peak Reverse
|
-di/dt=4580A/μs,VGE=- 15V Tj= 125oC
|
|
578
|
|
A
|
|
Recovery Current
|
|
|
Erec
|
Reverse Recovery Energy
|
|
|
129
|
|
mJ
|
|
Qr
|
Recovered Charge
|
VR=900V,IF=450A,
|
|
209
|
|
μC
|
|
IRM
|
Peak Reverse
|
-di/dt=4580A/μs,VGE=- 15V Tj= 150oC
|
|
585
|
|
A
|
|
Recovery Current
|
|
|
Erec
|
Reverse Recovery Energy
|
|
|
150
|
|
mJ
|
Dimensões da embalagem 
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