Transistor de poder do Silicon PNP Darlington
$0.72100-499 Piece/Pieces
$0.55≥500Piece/Pieces
Tipo de pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
porta: | Shanghai |
$0.72100-499 Piece/Pieces
$0.55≥500Piece/Pieces
Tipo de pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
porta: | Shanghai |
Modelo: YZPST-FW26025A
marca: Yzpst
Type: Intrinsic Semiconductor
Application: Radio
Batch Number: 2010+
VCBO: -100V
VCEO: -100V
VEBO: -5V
IC: -20A
Icm: -40A
IB: -0.5A
PC: 160W
TJ: 200℃
Tstg: -65~200℃
Unidades de venda | : | Piece/Pieces |
Tipo de pacote | : | 1. Embalagem anti-eletrostática 2. Caixa de caixa 3. Embalagem de proteção plástica |
Baixar | : |
Transistor de poder do Silicon PNP Darlington
YZPST-FW26025A
Transistor de poder do Silicon PNP Darlington
DESCRIÇÃO
· Alto ganho de corrente CC-
: hfe = 5000 (min)@ ic = -2a
· Tensão de sustentação do coletor-emitidor
: VCEO (SUS) = -100V (min)
· Variações mínimas de lote para lote para desempenho robusto do dispositivo e operação confiável.
FORMULÁRIOS
· Projetado para equipamentos industriais lineares e comutadores
Classificações máximas absolutas (Ta = 25 ℃)
SYMBOL |
PARAMETER |
VALUE |
UNIT |
VCBO |
Collector-Base Voltage |
-100 |
V |
VCEO |
Collector-Emitter Voltage |
-100 |
V |
VEBO |
Emitter-Base Voltage |
-5 |
V |
IC |
Collector Current-Continuous |
-20 |
A |
ICM |
Collector Current-Peak |
-40 |
A |
IB |
Base Current- Continuous |
-0.5 |
A |
PC |
Collector Power Dissipation @TC=25℃ |
160 |
W |
Tj |
Junction Temperature |
200 |
℃ |
Tstg |
Storage Temperature Range |
-65~200 |
℃ |
Características térmicas
SYMBOL |
PARAMETER |
MAX |
UNIT |
Rth j-c |
Thermal Resistance, Junction to Case |
1.09 |
℃/W |
CARACTERÍSTICAS ELÉTRICAS
Tc = 25 ℃, a menos que especificado de outra forma
SYMBOL |
PARAMETER |
CONDITIONS |
MIN |
TYP. |
MAX |
UNIT |
VCEO(SUS)* |
Collector-Emitter Sustaining Voltage |
IC= -100mA, IB= 0 |
-100 |
|
|
V |
VCE(sat)-1* |
Collector-Emitter Saturation Voltage |
IC= -10A ,IB= -40mA |
|
|
-2.0 |
V |
VCE(sat)-2* |
Collector-Emitter Saturation Voltage |
IC= -20A ,IB= -200mA |
|
|
-3.0 |
V |
VBE(sat)* |
Base-Emitter Saturation Voltage |
IC= -20A ,IB= -200mA |
|
|
-4 |
V |
V BE(on)* |
Base-Emitter On Voltage |
IC= -10A ; VCE= -3V |
|
|
-2.8 |
V |
ICEO |
Collector Cutoff current |
VCE= -50V, IB= 0 |
|
|
-1 |
mA |
ICEV |
Collector Cutoff current(VBE=-1.5V) |
VCE= -100V, IB= 0 |
|
|
-0.5 |
mA |
VCE= -100V, IB= 0,Tc=150℃ |
-5 |
|||||
IEBO |
Emitter Cutoff Current |
VEB= -5V; IC= 0 |
|
|
-2 |
mA |
hFE-1* |
DC Current Gain |
IC= -2A ; VCE= -3V |
5000 |
|
|
|
hFE-2* |
DC Current Gain |
IC= -10A ; VCE= -3V |
750 |
|
18000 |
|
hFE-3* |
DC Current Gain |
IC= -30A ; VCE= -3V |
200 |
|
|
|
*: Teste de pulso: largura de pulso = 300us, ciclo de trabalho ≤2%
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