Tiristor de condução reversa de comutação rápida FR1000AX50

Device Type

VDRM (1)

VDSM (1)

FR1000AX50

2500

2500

Repetitive peak off state leakage

I_DRM

20 mA

80mA (3)

Critical rate of voltage rise

dV/dt (4)

700 V/msec

Parameter

Symbol

Max.

Typ.

Units

Conditions

RMS value of on-state current

I_TRMS

1550

A

Nominal value

Average on-state current

I_T(AV)

1000

A

Continuous single-phase,half sine wave,180°conduction

Peak one cycle surge

(non repetitive) current

I_TSM

14000

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

8.2.x10⁵

A²s

8.3 msec and 10.0 msec

RNS reverse currrnt

I_R(RMS)

630

A

Average reverse current

I_R(AV)

    400

A

Continuous single-phase,half sine wave,180°conduction

Peak on-state voltage

V_TM

2.2

V

I_TM=1000A T_j = 125 ^oC

Peak reverse voltage

V_RM

4.0

V

I_RM=1200A, T_j = 125 ^oC

Critical rate of rise of on-state

current

di/dt

      300

A/ms

V_D=1/2V_DRM,I_TM=800A f=60H_Z I_GM=1.5A,di_G/dt=1.0A/us,Tj=125℃      

Critical rate of decrease of reverse conmmutating current

(di/dt)_C

200

A/ms

I_TM=4000A,tw=60us,I_RM=4000A,dv/dt=700V/us,V_DM=1/2V_DRN,Tj=125℃,Saturable reactor7500v.us

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

P_GM

30

W

t_p = 40 us

Average gate power dissipation

P_G(AV)

8

W

Peak gate current

I_GM

10

A

Gate current required to trigger all units

I_GT

350

mA

V_D = 6 V;R_L = 2 ohms;T_j = +25 ^oC

Gate voltage required to trigger all units

V_GT

4

V

V_D = 6 V;R_L = 2 ohms;T_j = 25^oC

Peak non- trigger voltage

V_GD

0.2

V

T_j = 125 ^oC;V_D=1/2V_DRM

Parameter

Symbol

.

Max.

Typ.

Units

Conditions

Turn-off time  

t_q

    50

ms

I_TM =4000 A; di₁/dt = -200A/ms;

di₂/dt=50A/us,I_RM=500A; dV/dt =700 V/ms V_DR=1250V

T_j = 125 ^oC;tw=60us

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+125

^oC

Storage temperature

T_stg

-40

+150

^oC

Thyristor part thermal resistance - junction to fin

R_QⅠ (j-f)

0.022

^oC/W

Double sided cooled

Diode part thermal resistamce – junction to fin

R_QⅢ (j-f)

0.070

^oC/W

Double sided cooled

Mounting force

P

45

kN

Weight

W

670

g