Capacidade DV/DT alta tiristores de controle de fase 320A
$452-49 Piece/Pieces
$39≥50Piece/Pieces
Tipo de pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
porta: | Shanghai |
$452-49 Piece/Pieces
$39≥50Piece/Pieces
Tipo de pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
porta: | Shanghai |
Modelo: YZPST-T171-320-10
marca: Yzpst
Tipo De Fornecimento: Fabricante original
Materiais De Referência: foto, outro
Configuração: Variedade
Quebra De Corrente: Não aplicável
Temperatura De Operação: -40 ° C ~ 125 ° C
Tipo SCR: Portão Sensível
Estrutura: solteiro
Voltage-on: Não aplicável
Gatilho Da Porta De Tensão (Vgt) (máximo): Não aplicável
Saída De Corrente (máximo): Não aplicável
ITRMS: 502A
ITSM: 7kA
IH: 300mA
Tiristores de controle de fase
YZPST-T171-320-10
Características
Configuração do portão de amplificação central
Encapsulamento ligado a compressão
Alta capacidade de dv/dt
Tipo de pino, rosca polegada ou métrica
Aplicações típicas
Comutação de energia média
Fontes de alimentação DC
Classificações e características máximas
Symbol |
Parameter |
Values |
Units |
Test Conditions |
|
ON-STATE |
|
|
|
||
ITAV |
Mean on-state current |
320 |
A |
Sinewave,180° conduction,Tc=84oC |
|
ITRMS |
RMS value of on-state current |
502 |
A |
Nominal value |
|
ITSM |
Peak one cycle surge (non repetitive) current |
7 |
kA |
10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
|
I2t |
I square t |
240 |
KA2s |
8.3 msec and 10.0 msec |
|
IL |
Latching current |
700 |
mA |
VD = 24 V; RL= 12 ohms |
|
IH |
Holding current |
300 |
mA |
VD = 24 V; I = 2.5 A |
|
VTM |
Peak on-state voltage |
1.6 |
V |
ITM = 1005 A |
|
di/dt |
Critical rate of rise of on-state current |
non-repetitive |
1000 |
A/ms |
Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM |
repetitive |
- |
||||
BLOCKING |
|
|
|
||
VDRM VRRM |
Repetitive peak off state voltage Repetitive peak reverse voltage |
1000 |
V |
|
|
VDSM VRSM |
Non repetitive peak off state voltage Non repetitive peak reverse voltage |
1100 |
V |
|
|
IDRM IRRM |
Repetitive peak off state current Repetitive peak reverse current |
70 |
mA |
Tj = 100 oC ,VRRM VDRM applied |
|
dV/dt |
Critical rate of voltage rise |
500 |
V/ms |
TJ=TJmax, linear to 80% rated VDRM |
|
TRIGGEING |
|
|
|
||
PG(AV) |
Average gate power dissipation |
3 |
W |
|
|
PGM |
Peak gate power dissipation |
- |
W |
|
|
IGM |
Peak gate current |
6 |
A |
|
|
IGT |
Gate trigger current |
250 |
mA |
TC = 25 oC |
|
VGT |
Gate trigger voltage |
2.5 |
V |
TC = 25 oC |
|
VGD |
Gate non-trigger voltage |
0.6 |
V |
Tj = 125 oC |
|
VT0 |
|
1.006 |
V |
Tj = 125 oC |
|
rT |
|
0612 |
mΩ |
|
|
SWITCHING |
|
|
|
||
tq |
Turn-off time |
125 |
ms |
ITM=320A, TJ=TJmax, di/dt=10A/μs, VR=100V,dv/dt=50V/μs, Gate 0V 100Ω, tp=500μs |
|
td |
Delay time |
- |
Gate current A, di/dt=40A/μs, Vd=0.67%VDRM, TJ=25 oC |
Térmico e mecânico
Symbol |
Parameter |
Values |
Units |
Test Conditions |
Tj |
Operating temperature |
-40~125 |
oC |
|
Tstg |
Storage temperature |
-40~125 |
oC |
|
R th (j-c) |
Thermal resistance - junction to case |
0.085 |
oC/W |
DC operation ,Single sided cooled |
R th (c-s) |
Thermal resistance - case to sink |
- |
oC/W |
Single sided cooled |
P |
Mounting force |
- |
Nm |
± 10 % |
W |
Weight |
440 |
g |
about |
CONTORNO
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.