TO-220F 2SA1930 SILICON PNP Transistor High FT Par Complementary com 2SC5171

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

VCBO

-180

V

Collector to Emitter Voltage

VCEO

-180

V

Emitter to Base Voltage

VEBO

-5.0

V

Collector Current - Continuous

IC

-2.0

A

Base Current

IB

-1.0

A

Collector Power Dissipation

PC

2.0

W

Collector Power Dissipation

PC(Tc=25℃)

20

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

Parameter

 Symbol

Test Conditions

 Min

 Typ

 Max

Unit

Collector-Emitter Breakdown

Voltage

VCEO

IC=-10mA      IB=0

-180

V

Collector Cut-Off Current

ICBO

VCB=-180V    IE=0

-5.0

μA

Emitter Cut-Off Current

IEBO

VEB=-5.0V     IC=0

-5.0

μA

DC Current Gain

hFE(1)

VCE=-5.0V     IC=-100mA

100

320

hFE(2)

VCE=-5.0V     IC=-1.0A

50

Collector to Emitter Saturation Voltage

VCE(sat)

IC=-1.0A        IB=-100mA

-0.24

-1.0

V

Base to Emitter Voltage

VBE

VCE=-5.0V     IC=-1.0A

-0.68

-1.5

V

Transition Frequency

fT

VCE=-5.0V     IC=-300mA

200

MHz

Collector output capacitance

Cob

VCB=-10V      IE=0

f=1.0MHz

26

pF