$0.154000-19999 Piece/Pieces
$0.13≥20000Piece/Pieces
| Tipo de pagamento: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| transporte: | Ocean,Land,Others |
| porta: | SHANGHAI |
Modelo: YZPST-BT152-600R
marca: Yzpst
Place Of Origin: China
IT (RMS): 20A
VRRM: 600V
IT(AV): 13A
ITSM: 200A
IGM: 4A
PGM: 5W
PG(AV): 1W
Tstg: -40--+150℃
Tj: -40--+125℃
VDRM: 600V
| Unidades de venda | : | Piece/Pieces |
| Tipo de pacote | : | 1. Embalagem anti-eletrostática 2. Caixa de caixa 3. trança |
| Baixar | : |
|
BT152-600R/800R
A alta capacidade da resistência ao choque atual 600V BT152-600R SCR
YZPST-BT152-600R
● Recursos do produto
Silicon Unilateral Disposited NPNP Quatro camadas Estrutura,
P+ no isolamento de difusão através da difusão,
Estrutura de mesa única (Mesa única),
Processo de passivação de vidro de mesa,
O eletrodo traseiro (ânodo) metal: ti-ni-Ag
A alta capacidade de resistência ao choque atual
● Os principais propósitos
Interruptor atual alternado,
Conversor de energia AC DC,
O controle do aquecimento elétrico
Controle de velocidade do motor
● Pacote
TO-220M1 TO-220F
Recurso principal (TJ = 25 ℃)
| Symbol | Value | Unit |
| IT (RMS) | 20 | A |
| VDRM VRRM | 600/800 | V |
| IGT | ≤200 | uA |
Classificações absolutas (valores limitando)
| Symbol | Parameter | Value | Unit |
| IT (RMS) | RMS on-state current (180 °conduction angle) | 20 | A |
| IT(AV) | AV on-state current (180 °conduction angle) | 13 | A |
| ITSM | Non repetitive surge peak on-state | 200 | A |
| Current (tp=10ms) | |||
| IGM | Peak gate current(tp=20us) | 4 | A |
| PGM | Peak gate power | 5 | W |
| PG(AV) | Average gate power | 1 | W |
| Tstg | Storage temperature | 110 | ℃ |
| Tj | Operating junction temperature | 85 |
| Symbol | Parameter | Value | Unit | |
| TO-220M1 | 2.2 | |||
| Rth (j-c) | Junction to case | TO-220F | 2.5 | ℃/W |
| Symbol | Test Conditions | Value | Unit | |||
| Min | Type | Max | ||||
| IGT | VD=12V, RL=33Ω | ---- | 5 | 25 | mA | |
| VGT | VD=12V, RL=33Ω | ----- | ----- | 1.3 | V | |
| VGD | VD=VDRM, RL=3.3KΩ, RGK=1KΩ,Tj=125℃ | 0.2 | ----- | ----- | V | |
| IH | IT=500mA | ----- | ----- | 30 | mA | |
| IL | IG=1.2IGT | ----- | ----- | 60 | mA | |
| dV/dt | VD=67%VDRM, GateOpen, Tj=110℃ | 500 | v/ μs | |||
| ----- | ----- | |||||
| VTM | IT=30A,tp=380 μs | ----- | ----- | 1.6 | V | |
| dI/dt | IG=2IGT | 50 | ----- | ----- | A/μs | |
| I2T | Tp=10ms | ----- | ----- | 200 | A2S | |
| Tj=25℃ | ----- | ----- | 10 | μA | ||
| IDRM | VD=VDRM | Tj=125℃ | ----- | ----- | 1 | mA |
| Tj=25℃ | ----- | ----- | 10 | μA | ||
| IRRM | VR=VRRM | Tj=125℃ | ----- | ----- | 1 | mA |
Número De Telefone: 86-514-87782298
Whatsapp: +8613805278321
Endereço: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
site: https://pt.yzpst.com
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