Capacidade de alta sobretagem 400A Pacote TG-C Triac TG25C60
$5100-999 Piece/Pieces
$2.9≥1000Piece/Pieces
Tipo de pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Land,Express,Others |
porta: | SHANGHAI |
$5100-999 Piece/Pieces
$2.9≥1000Piece/Pieces
Tipo de pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Land,Express,Others |
porta: | SHANGHAI |
Modelo: YZPST-BTA25-600BW TG25C60
marca: Yzpst
Lugar De Origem: China
IT RMS: 25A
ITSM: 300/330A
I2t: 450A2S
PGM: 10W
PGAV: 1W
IGM: 3A
VGM: 10V
Di/dt: 50A/μS
YZPST-TG25..SERIES
YZPST-BTA25-600BW TG25C60
Triac (ISOLADO TIPO)
TG25C/E/D são TRIACs moldados isolados, adequados para ampla gama de aplicações como copiadora, forno de microondas, interruptor de estado sólido,
Controle do motor, controle de luz e controle do aquecedor.
IT AV 25A
Capacidade de alta sobretagem 400A
AC2500V de montagem isolada
Terminais de guia
Máximo Classificações
Symbol |
Item |
Conditions |
Ratings |
Unit |
IT RMS |
R.M.S. On-State Current |
Tc |
25 |
A |
ITSM |
Surge On-State Current |
One cycle, 50Hz/60Hz, peak, non-repetitive |
300/330 |
A |
I2t |
I2t |
Value for one cycle of surge current |
450 |
A2S |
PGM |
Peak Gate Power Dissipation |
|
10 |
W |
PGAV |
Average Gate Power Dissipation |
|
1 |
W |
IGM |
Peak Gate Current |
|
3 |
A |
VGM |
Peak Gate Voltage |
|
10 |
V |
di/dt |
Critical Rate of Rise of On-State Current |
IG=100mA,Tj=25 VD=1/2VDRM dIG/dt=1A/μS |
50 |
A/μS |
Tj |
Operating Junction Temperature |
|
-25~+125 |
℃ |
Tstg |
Storage Temperature |
|
-40~+125 |
℃ |
VISO |
Isolation Breakdown Voltage R.M.S. |
A.C. 1 minute |
2500 |
V |
|
Mounting Torque M4 |
Recommended Value 1.0 ~1.4(10~14) |
14 |
kgf.CM |
TJ = 25 a menos que de outra forma Especificadas
Symbol | Item | Ratings | Unit | |||
TG25C60 | TG25C80 | TG25C100 | TG25C12 | V | ||
VDRM | Repetitive Peak Off-State Voltage | 400 | 800 | 1000 | 1200 | V |
Symbol |
Item |
Conditions |
Ratings |
Unit |
|
IDRM |
Reptitive Peak Off-State Current, max |
VD=VDRM, Single phase, half wave, Tj=125℃ |
5 |
mA |
|
VTM |
Peak On-State Voltage, max |
On-State Current On-State Current √2X IT (RMS),Inst. measurement |
1.4 |
V |
|
I GT1 + |
1 |
Gate Trigger Current, max |
Tj =25℃, IT=1A, VD=6V |
50 |
mA |
I GT1 - |
2 |
Tj =25℃, IT=1A, VD=6V |
50 |
mA |
|
I GT3 + |
3 |
|
- |
mA |
|
I GT3 + |
4 |
Tj =25℃, IT=1A, VD=6V |
50 |
mA |
|
V GT1+ |
1 |
Gate Trigger Voltage, max |
Tj =25℃, IT=1A, VD=6V |
3 |
V |
V GT1- |
2 |
Tj =25℃, IT=1A, VD=6V |
3 |
V |
|
V GT3+ |
3 |
|
- |
V |
|
V GT3- |
4 |
Tj =25℃, IT=1A, VD=6V |
3 |
|
|
VGD |
Non-Trigger Gate Voltage, min |
Tj =25℃, VD= 1/2VRRM |
0.2 |
V |
|
tgt |
Turn On Time, max. |
IT=(RMS),IG= 100mA,VD=1/2VDR M,Tj=25℃,dIG/dt=1A/μS |
10 |
V |
|
dv/dt |
Critical Rate of Rise on-State Voltage,min. |
Tj=25℃,VD=2/3VDRM Exoponential wave. |
20 |
V/μS |
|
(dv/dt) c |
Critical Rate of Rise off-State Voltage at commutation, min |
Tj=25℃,VD=2/3VDRM di/dtc=15A/μS |
5 |
V/μS |
|
IH |
Holding Current, typ. |
Tj =25℃ |
30 |
mA |
|
Rth(j-c) |
Thermal Impedance, max |
Junction to case |
1.5 |
℃/W |
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.