Preço do transistor de potência transistor SCR com ótimo preço
obtenha o ultimo preçoTipo de pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
porta: | Shanghai |
Tipo de pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
porta: | Shanghai |
Modelo: YZPST-1690-TO-247S
marca: YZPST
Tipo de pacote | : | 1. Embalagem anti-eletrostática 2. Caixa de papelão 3. Embalagem protetora de plástico |
YZPST-1690-TO-247S
D E SCRI P TI O N:
PS T1 6 9 0 s e r i e s o f ícone si l c o n controlada iers f t i rec, w om h i g h ab i l dade para o wit h r um d t h e s h o ck l o a d i n g o lar g e c u r r en t, p ro v ide h i g h d v / d t taxa com ith s t r a g resistir a um ce para de e lec t r o m a g ne tic i n t e r f e n c re de e. Th e y uma re de e s p e cialmente rec o mm en d e d f r o uso o n s o l i d r a te rela y, mo t o rc y cle, po w e r c ha r g e r , T - t oo ls e tcPreço do transistor de potência transistor SCR com ótimo preço
A B S O L U TE MA X I MU M R A TINGS
Parameter |
Symbol |
Value |
Unit |
Storage junction temperature range |
Tstg |
-40-150 |
℃ |
Operating junction temperature range |
Tj |
-40-125 |
℃ |
Repetitive peak off-state voltage |
VDRM |
1600 |
V |
Repetitive peak reverse voltage |
VRRM |
1600 |
V |
Average on-state current (TC=80℃) |
IT(AV) |
56 |
A |
RMS on-state current(TC=80℃) |
IT(RMS) |
90 |
A |
Non repetitive surge peak on-state current (tp=10ms) |
ITSM |
1250 |
A |
I2t value for fusing (tp=10ms) |
I2t |
7800 |
A2s |
Critical rate of rise of on-state current (IG=2×IGT) |
dI/dt |
150 |
A/μs |
Peak gate current |
IGM |
10 |
A |
Peak gate power |
PGM |
20 |
W |
Average gate power dissipation(Tj=125℃) |
PG(AV) |
2 |
W |
E L E C TRICAL CH A R A S CTERI TIQUES (T j = 25 ℃ u n menos O U T r w ise s pe ci f e d )
Symbol |
Test Condition |
Value |
Unit |
||
MIN. |
TYP. |
MAX. |
|||
IGT |
VD=12V RL=30Ω |
10 |
- |
80 |
mA |
VGT |
- |
- |
1.5 |
V |
|
VGD |
VD=VDRM Tj=125℃ |
0.25 |
- |
- |
V |
IL |
IG=1.2 IGT |
- |
- |
200 |
mA |
IH |
IT=1A |
- |
- |
150 |
mA |
dV/dt |
VD=2/3VDRM Tj=125℃ Gate Open |
1000 |
- |
- |
V/μs |
S TA TIC C H A RA CTERI S TICS
Symbol |
Parameter |
Value(MAX) |
Unit |
|
VTM |
ITM=110A tp=380μs |
TC=25℃ |
1.8 |
V |
IDRM |
VD=VDRM VR=VRRM |
TC=25℃ |
50 |
μA |
IRRM |
TC=125℃ |
10 |
mA |
TÉRMICO R E S I S T A CE S
Symbol |
Parameter |
Value |
Unit |
Rth(j-c) |
junction to case(DC) |
0.27 |
℃/W |
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