800V semicondutores scr electronic
$0.0221000-9999 Piece/Pieces
$0.018≥10000Piece/Pieces
Tipo de pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Quantidade de pedido mínimo: | 1000 Piece/Pieces |
transporte: | Ocean,Air |
porta: | SHANGHAI |
$0.0221000-9999 Piece/Pieces
$0.018≥10000Piece/Pieces
Tipo de pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Quantidade de pedido mínimo: | 1000 Piece/Pieces |
transporte: | Ocean,Air |
porta: | SHANGHAI |
Modelo: YZPST-X0206
marca: YZPST
Unidades de venda | : | Piece/Pieces |
Tipo de pacote | : | 1. Embalagem anti-eletrostática 2. Caixa de papelão 3. Embalagem protetora de plástico |
Baixar | : |
Dispositivo Semicondutor Scr
YZPST-X0206
Scr Semiconductor Device 800V de aplicações ● Protetor de vazamento, timer e ignitor de gás ● Controlador temperado
Classificações máximas (Ta = 25 ℃ )
Parameter |
Symbol |
Voltage class |
Unit |
|
-6 |
-8 |
|||
Repetitive peak reverse voltage |
VRRM |
600 |
800 |
V |
Repetitive peak off-state voltage |
VDRM |
600 |
800 |
V |
RMS on-state current |
IT (RMS) |
1.25 |
A |
|
Average on-state current |
IT (AV) |
0.8 |
A |
|
Surge on-state current |
ITSM |
22.5 |
A |
|
I2t for fusing |
I2t |
2.5 |
A2s |
|
Average gate power dissipation |
PG (AV) |
0.2 |
W |
|
Peak gate reverse voltage |
VRGM |
8 |
V |
|
Peak gate forward current |
IFGM |
1.2 |
A |
|
Junction temperature |
Tj |
– 40 to +125 |
°C |
|
Storage temperature |
Tstg |
– 40 to +150 |
°C |
características elétricas
Parameter |
Symbol |
Min. |
Typ. |
Max. |
Unit |
Test conditions |
Repetitive peak reverse current |
IRRM |
- |
- |
0.5 |
mA |
Tj =125°C, VRRM applied |
Repetitive peak off-state current |
IDRM |
- |
- |
0.5 |
mA |
Tj =125°C, VDRM applied, RGK = 1 kÙ |
On-state voltage |
VTM |
- |
- |
1.45 |
V |
Ta =25°C, ITM =2.5A |
Gate trigger voltage |
VGT |
- |
- |
0.8 |
V |
Tj =25°C, VD = 12 V, RL = 140Ù |
Gate non-trigger voltage |
VGD |
0.1 |
- |
- |
V |
Tj =125°C, VD = VDRM,RGK = 1 kÙ |
Gate trigger current |
IGT |
20 |
- |
200 |
μA |
Tj =25°C, VD = 12 V, RL = 140Ù |
Holding current |
IH |
- |
- |
5 |
mA |
Tj =25°C, VD = 12 V,RGK = 1 kÙ |
Thermal resistance |
Rth (j-a) |
- |
- |
150 |
°C/W |
Junction to ambient |
Item atual de disparo
Item |
A |
B |
C |
D |
E |
F |
IGT (μA) |
20 to 50 |
40 to 80 |
70 to 100 |
20 to 80 |
20 to 100 |
100 to 200 |
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Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.