$3650-499 Piece/Pieces
$32≥500Piece/Pieces
| Tipo de pagamento: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| transporte: | Ocean,Land |
| porta: | SHANGHAI |
Modelo: YZPST-M2A016120L
marca: Yzpst
Lugar De Origem: China
VDSmax: 1200V
VGSmax: -8/+22V
VGSop: -4/+18V
ID Tc=25℃: 115A
ID Tc=100℃: 76A
ID(pulse): 250A
PD: 582W
TJ, TSTG: -55 to +175℃
| Unidades de venda | : | Piece/Pieces |
| Baixar | : |
|
N-Channel Sic Power MOSFET P/N: YZPST-M2A016120L SIC MOSFET
Características
Alta tensão de bloqueio com baixa resistência
Comutação de alta velocidade com baixa capacitância
Fácil de paralelo e simples de dirigir
Benefícios
Maior eficiência do sistema
Requisitos de resfriamento reduzidos
Aumento da densidade de potência
Frequência de troca de sistema aumentada
Formulários
Energia renovável
Carregadores de bateria EV
Conversores CC/DC de alta tensão
Modo de comutador Supplies de alimentação
Pacote
|
Part Number |
Package |
|
M2A016120L |
TO-247-4 |
Classificações máximas (t c = 25 ℃ Un menos especificado de outra forma)
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
| VDSmax | Drain-Source Voltage | 1200 | V | VGS=0V, ID=100μA | |
| VGSmax | Gate-Source Voltage | -8/+22 | V | Absolute maximum values | |
| VGSop | Gate-Source Voltage |
-4/+18 |
V | Recommended operational values | |
| ID | Continuous Drain Current | 115 | A | VGS=18V, Tc=25℃ | |
| 76 | VGS=18V, Tc=100℃ | ||||
| ID(pulse) | Pulsed Drain Current | 250 | A | Pulse width tp limited by TJmax | |
| PD | Power Dissipation | 582 | W | Tc=25℃, TJ=175℃ | |
| TJ, TSTG | Operating Junction and Storage Temperature | -55 to +175 | ℃ |
| Symbol | Parameter | Min. | Typ. | Max. | Unit | Test Conditions | Note |
| V(BR)DSS | Drain-Source Breakdown Voltage | 1200 | / | / | V | VGS=0V, ID=100μA | |
| VGS(th) | Gate Threshold Voltage | 1.9 | 2.6 | 4 | V | VDS=VGS, ID=23mA | |
| / | 1.8 | / | VDS=VGS, ID=23mA, TJ=175℃ | ||||
| IDSS | Zero Gate Voltage Drain Current | / | 1 | 100 | µA | VDS=1200V, VGS=0V | |
| IGSS+ | Gate-Source Leakage Current | / | 10 | 250 | nA | VDS=0V, VGS=22V | |
| IGSS- | Gate-Source Leakage Current | / | 10 | 250 | nA | VDS=0V, VGS=-8V | |
| RDS(on) | Drain-Source On-State Resistance | / | 16 | 21 | mΩ | VGS=18V, ID=75A | |
| / | 28 | / | VGS=18V, ID=75A, TJ=175℃ | ||||
| gfs | Transconductance | / | 40.5 | / | S | VDS=20V, ID=75A | |
| / | 37 | / | VDS=20V, ID=75A, TJ=175℃ | ||||
| Ciss | Input Capacitance | / | 4300 | / | VGS=0V | ||
| Coss | Output Capacitance | / | 236 | / | pF | VDS=1000V | |
| Crss | Reverse Transfer Capacitance | / | 35 | / | f=1MHz | ||
| Eoss | Coss Stored Energy | / | 136 | / | µJ | VAC=25mV | |
| EON | Turn-On Switching Energy | / | 2.1 | / | µJ | VDS=800V, VGS=-4V/18V | |
| EOFF | Turn-Off Switching Energy | / | 1.6 | / | ID=40A, RG(ext)=2.5Ω, L=100μH | ||
| td(on) | Turn-On Delay Time | / | 150 | / | |||
| tr | Rise Time | / | 38 | / | VDS=800V, VGS=-4V/18V, ID=40A RG(ext)=2.5Ω, RL=20Ω | ||
| td(off) | Turn-Off Delay Time | / | 108 | / | ns | ||
| tf | Fall Time | / | 35 | / | |||
| RG(int) | Internal Gate Resistance | / | 2.3 | / | Ω | f=1MHz, VAC=25mV | |
| QGS | Gate to Source Charge | / | 60 | / | VDS=800V | ||
| QGD | Gate to Drain Charge | / | 44 | / | nC | VGS=-4V/18V | |
| QG | Total Gate Charge | / | 242 | / | ID=40A |
Pacote Dimensões
Número De Telefone: 86-514-87782298
Whatsapp: +8613805278321
Endereço: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
site: https://pt.yzpst.com
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