65R72GF N-canal Power MOSFET como substituição de STW48N60M2
$4.25100-999 Piece/Pieces
$3.2≥1000Piece/Pieces
Tipo de pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
porta: | SHANGHAI |
$4.25100-999 Piece/Pieces
$3.2≥1000Piece/Pieces
Tipo de pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
transporte: | Ocean,Air |
porta: | SHANGHAI |
Modelo: YZPST-65R72GF
marca: Yzpst
Lugar De Origem: China
Vds (V) At Tj Max.: 700
Rds(ofi)max. At 25°C (mQ): Vgs=10V 72
Qg Max. (nC): 130
Qgs (nC): 30
Qgd (nC): 34
Configuration: single
Unidades de venda | : | Piece/Pieces |
Tipo de pacote | : | 1. Embalagem anti-eletrostática 2. Caixa de caixa 3. Embalagem de proteção plástica |
Baixar | : |
N-Channel Power MOSFET
Tipo: YZPST-65R72GF
PRODUCT SUMMARY | |
Vds (V) at Tj max. | 700 |
Rds(ofi)max. at 25°C (mQ) | Vgs=10V 72 |
Qg max. (nC) | 130 |
Qgs (nC) | 30 |
Qgd (nC) | 34 |
Configuration | single |
Formulários
Modo de comutação Supplies de alimentação (SMPS)ORDERING INFORMATION | |
Device | YZPST-65R72GF |
Device Package | TO-247 |
Marking | 65R72GF |
ABSOLUTE MAXIMUM RATINGS (Tc=25oC, unless otherwise noted) | |||
Parameter | Symbol | Limit | Unit |
Drain to Source Voltage | Vdss | 650 | V |
Continuous Drain Current (@Tc=25°C) | Id | 47⑴ | A |
Continuous Drain Current (@Tc=100°C) | 29⑴ | A | |
Drain current pulsed (2) | Idm | 138⑴ | A |
Gate to Source Voltage | Vgs | ±30 | V |
Single pulsed Avalanche Energy(3) | Eas | 1500 | mJ |
MOSFET dv/dt ruggedness (@VDS=0~400V) | dv/dt | 25 | V/ns |
Peak diode Recovery dv/dt ⑷ | dv/dt | 15 | V/ns |
Total power dissipation (@Tc=25°C) | Pd | 417 | W |
Derating Factor above 25°C | 3.34 | w/°c | |
Operating Junction Temperature & StorageTemperature | Tstg, Tj | -55to + 150 | °C |
Maximum lead temperature for soldering purpose | Tl | 260 | °C |
Notas
1. A corrente de drenagem é limitada pela temperatura máxima da junção.
2. Classificação repetitiva: largura de pulso limitada pela temperatura da junção.
3 L = 37mh , l As = 9a, V dd = 50V, r g = 25q, começando em tj = 25 ° C
4. i sd <l d , di/dt = woa/us, v dd <bv dss , começando em tj = 25 ° C
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