Diodos prisioneiros de recuperação padrão 95HF80

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Repetitive peak reverse voltage

V_RRM

800

V

T_j = 150 ^oC

Non repetitive peak reverse voltage

V_RSM

960

V

T_j = 150 ^oC

Max. average forward current

I_F(AV)

95

A

Sinewave,180^o conduction,T_c=140^oC

Max. RMS forward current

I_F(RMS)

149

A

Nominal value

Max. peak, one-cycle forward,

non-repetitive surge current

I_FSM

2000

A

10.0 msec (50Hz), half sinewave,

T_j = 180 ^oC, V_RM = 0.6V_RRM

Maximum I²t for fusing

I²t

20

kA²s

Max. forward voltage drop

V_FM

1.40

V

I_TM = 267A; T_c=25^oC

Threshold voltage

V_F0

0.73

V

Slope resistance

r_f

3.0

mΩ

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-55

+180

^oC

Storage temperature

T_stg

-55

+180

^oC

Reverse recovery charge

Q_rr

-

μc

Thermal resistance - junction to case

R_Q (j-c)

-

-

0.27

K/W

Thermal resistamce - case to heatsink

R_Q (c-s)

-

-

0.25

K/W

Mounting force

P

3.4

Nm

± 10%

Weight

W

-

-

16

g

about

Case style

DO-5

See Outline Table