$0.252000-99999 Piece/Pieces
$0.22≥100000Piece/Pieces
| Tipo de pagamento: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| Quantidade de pedido mínimo: | 2000 Piece/Pieces |
| transporte: | Ocean,Air |
| porta: | SHANGHAI |
Modelo: YZPST-25TTS12-1
marca: YZPST
| Unidades de venda | : | Piece/Pieces |
| Tipo de pacote | : | 1. Embalagem anti-eletrostática 2. Caixa de papelão 3. Embalagem protetora de plástico |
Controle de fase SCR, 25 A
DESCRIÇÃO / CARACTERÍSTICAS
A série de alta tensão 25TTS de retificadores controlados por silício é projetada especificamente para aplicações de comutação de potência média e controle de fase. A tecnologia de passivação de vidro usada tem operação confiável até
Temperatura de junção de 125 ° C.
As aplicações típicas estão na retificação de entrada (partida suave) e esses produtos são projetados para serem usados com diodos de entrada, interruptores e retificadores de saída Vishay HPP, que estão disponíveis em contornos de pacote idênticos.
Este produto foi projetado e qualificado para o nível industrial.
|
PRODUCT SUMMARY |
|
|
VT at 16 A |
< 1.25 V |
|
ITSM |
300 A |
|
VRRM |
800/1200 V |
|
OUTPUT CURRENT IN TYPICAL APPLICATIONS |
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|
APPLICATIONS |
SINGLE-PHASE BRIDGE |
THREE-PHASE BRIDGE |
UNITS |
|
Capacitive input filter TA = 55 °C, TJ = 125 °C, common heatsink of 1 °C/W |
18 |
22 |
A |
|
MAJOR RATINGS AND CHARACTERISTICS |
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|
PARAMETER |
TEST CONDITIONS |
VALUES |
UNITS |
|
IT(AV) |
Sinusoidal waveform |
16 |
A |
|
IRMS |
|
25 |
|
|
VRRM/VDRM |
|
800/1200 |
V |
|
ITSM |
|
300 |
A |
|
VT |
16 A, TJ = 25 °C |
1.25 |
V |
|
dV/dt |
|
500 |
V/µs |
|
dI/dt |
|
150 |
A/µs |
|
TJ |
|
- 40 to 125 |
°C |
|
VOLTAGE RATINGS |
|||
|
PART NUMBER |
VRRM, MAXIMUM PEAK REVERSE VOLTAGE V |
VDRM, MAXIMUM PEAK DIRECT VOLTAGE V |
IRRM/IDRM AT 125 °C mA |
|
25TTS08 |
800 |
800 |
10 |
|
25TTS12 |
1200 |
1200 |
|
|
ABSOLUTE MAXIMUM RATINGS |
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|
PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
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|
TYP. |
MAX. |
|||||
|
Maximum average on-state current |
IT(AV) |
TC = 93 °C, 180° conduction half sine wave |
16 |
A |
||
|
Maximum RMS on-state current |
IRMS |
|
25 |
|||
|
Maximum peak, one-cycle, non-repetitive surge current |
ITSM |
10 ms sine pulse, rated VRRM applied |
300 |
|||
|
10 ms sine pulse, no voltage reapplied |
350 |
|||||
|
Maximum I2t for fusing |
I2t |
10 ms sine pulse, rated VRRM applied |
450 |
A2s |
||
|
10 ms sine pulse, no voltage reapplied |
630 |
|||||
|
Maximum I2√t for fusing |
I2√t |
t = 0.1 to 10 ms, no voltage reapplied |
6300 |
A2√s |
||
|
Maximum on-state voltage drop |
VTM |
16 A, TJ = 25 °C |
1.25 |
V |
||
|
On-state slope resistance |
rt |
TJ = 125 °C |
12.0 |
mΩ |
||
|
Threshold voltage |
VT(TO) |
1.0 |
V |
|||
|
Maximum reverse and direct leakage current |
IRM/IDM |
TJ = 25 °C |
VR = Rated VRRM/VDRM |
0.5 |
mA |
|
|
TJ = 125 °C |
10 |
|||||
|
Holding current |
IH |
Anode supply = 6 V, resistive load, initial IT = 1 A |
- |
100 |
||
|
Maximum latching current |
IL |
Anode supply = 6 V, resistive load |
200 |
|||
|
Maximum rate of rise of off-state voltage |
dV/dt |
|
500 |
V/µs |
||
|
Maximum rate of rise of turned-on current |
dI/dt |
|
150 |
A/µs |
||
|
TRIGGERING |
||||
|
PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
|
Maximum peak gate power |
PGM |
|
8.0 |
W |
|
Maximum average gate power |
PG(AV) |
|
2.0 |
|
|
Maximum peak positive gate current |
+ IGM |
|
1.5 |
A |
|
Maximum peak negative gate voltage |
- VGM |
|
10 |
V |
|
Maximum required DC gate current to trigger |
IGT |
Anode supply = 6 V, resistive load, TJ = - 10 °C |
60 |
mA |
|
Anode supply = 6 V, resistive load, TJ = 25 °C |
45 |
|||
|
Anode supply = 6 V, resistive load, TJ = 125 °C |
20 |
|||
|
Maximum required DC gate voltage to trigger |
VGT |
Anode supply = 6 V, resistive load, TJ = - 10 °C |
2.5 |
V |
|
Anode supply = 6 V, resistive load, TJ = 25 °C |
2.0 |
|||
|
Anode supply = 6 V, resistive load, TJ = 125 °C |
1.0 |
|||
|
Maximum DC gate voltage not to trigger |
VGD |
TJ = 125 °C, VDRM = Rated value |
0.25 |
|
|
Maximum DC gate current not to trigger |
IGD |
2.0 |
mA |
|
|
SWITCHING |
||||
|
PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
|
Typical turn-on time |
tgt |
TJ = 25 °C |
0.9 |
µs |
|
Typical reverse recovery time |
trr |
TJ = 125 °C |
4 |
|
|
Typical turn-off time |
tq |
110 |
||
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THERMAL AND MECHANICAL SPECIFICATIONS |
|||||
|
PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
|
|
Maximum junction and storage temperature range |
TJ, TStg |
|
- 40 to 125 |
°C |
|
|
Maximum thermal resistance, junction to case |
RthJC |
DC operation |
1.1 |
°C/W |
|
|
Maximum thermal resistance, junction to ambient |
RthJA |
|
62 |
||
|
Typical thermal resistance, case to heatsink |
RthCS |
Mounting surface, smooth and greased |
0.5 |
||
|
Approximate weight |
|
|
2 |
g |
|
|
0.07 |
oz. |
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|
Mounting torque |
minimum |
|
|
6 (5) |
kgf · cm (lbf · in) |
|
maximum |
|
|
12 (10) |
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|
Marking device |
|
Case style TO-220AB |
25TTS08 |
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|
25TTS12 |
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Número De Telefone: 86-514-87782298
Whatsapp: +8613805278321
Endereço: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
site: https://pt.yzpst.com
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