Parafuso plano Diodo rotativo 1200V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Repetitive peak reverse voltage

V_RRM

1200

V

Non repetitive peak reverse voltage

V_RSM

1300

V

Max. average forward current

I_F(AV)M

860

A

Sinewave,180^o conduction,T_c=80^oC

Max. RMS forward current

I_F(RMS)M

1250

A

Nominal value

Max. peak, one-cycle forward,

non-repetitive surge current

I_FSM

12

kA

10.0 msec (50Hz), half sinewave,

T_vj = T_vj max, VRM = 0.5V_RRM

Maximum I²t for fusing

I²t

725

kA²s

Max. forward voltage drop

V_FM

1.40

V

I_FM = 2600A; T_vj = 25^oC

Threshold voltage

V_F0

0.7

V

Slope resistance

r_T

1.5

mΩ

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+180

^oC

Storage temperature

T_stg

-40

+200

^oC

Reverse recovery charge

Q_rr

-

μc

Thermal resistance - junction to case

R_{Q (j-c)}

-

-

90

^oC /kW

Thermal resistamce - case to heatsink

R_{Q (c-s)}

-

-

80

^oC /kW

Mounting force

P

-

-

1.7

kN

± 20%

Weight

W

-

-

-

g

About

Case style

-

See Outline Table