YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Casa> Lista de Produto> Dispositivos de disco semicondutores (tipo de cápsula)> Tiristor de controle de fase.> Tiristores de Controle de Fase Direta DCR1278
Tiristores de Controle de Fase Direta DCR1278
Tiristores de Controle de Fase Direta DCR1278
Tiristores de Controle de Fase Direta DCR1278

Tiristores de Controle de Fase Direta DCR1278

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Tipo de pagamento:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
transporte:Ocean,Air
porta:SHANGHAI
Atributos do produto

ModeloYZPST-DCR1278

marcaYZPST

Descrição do produto

Controle de Fase de Tiristor de Alta Potência

YZPST-DCR1278

Características: Alta capacidade de dV / dt . Capacidade de bloqueio de até 4200 volts, Configuração de Gate de Amplificação Central, Tempo de Desligamento Máximo Garantido, Toda a Estrutura Difusa

. Dispositivo montado sob pressão


Direct Fast Control Thyristors DCR1278

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

1100

 

A

Sinewave,180o conduction,Tc=65oC

RMS value of on-state current

ITRMS

 

2000

 

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

 

ITSM

 

-

 

16.4

 

KA

 

KA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

1.35x106

 

A2s

8.3 msec and 10.0 msec

Latching current

IL

 

300

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

-

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

2.2

 

V

ITM = 2900 A; Duty cPSTCle £ 0.01%; Tj = 25 oC

Critical rate of rise of on-state

current (5, 6)

di/dt

 

-

 

A/ms

Switching from VDRM£ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

 

100

 

A/ms

Switching from VDRM£ 1000 V


CARACTERÍSTICAS ELÉTRICAS E CLASSIFICAÇÕES (cont`d)

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

-

 

W

tp = 40 us

Average gate power dissipation

PG(AV)

 

-

 

W

 

Peak gate current

IGM

 

-

 

A

 

Gate current required to trigger all units

IGT

 

-

400

-

 

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT

 

-

4.0

-

 

 

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

 

-

 

V

 

Dinâmico


Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

 

-

-

ms

ITM = 50 A; VD = Rated VDRM

Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms

Turn-off time (with VR = -50 V)

tq

 

-

-

ms

ITM = 1000 A; di/dt = 25 A/ms;

VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0;

Tj = 125 oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Qrr

 

*

 

mC

ITM = 1000 A; di/dt = 25 A/ms;

VR³ -50 V


* Para max. Garantido valor, entre em contato com a fábrica.


CARACTERÍSTICAS TÉRMICAS E MECÂNICAS E CLASSIFICAÇÕES

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thermal resistance - junction to case

RQ (j-c)

 

-

-

 

oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

 

-

-

 

oC/W

Double sided cooled *

Single sided cooled *

Thermal resistamce - junction to sink

RQ (j-s)

 

0.024

-

 

oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

20

24

 

kN

 

Weight

W

 

 

-

g

 


* Superfícies de montagem suaves, planas e lubrificadas


ESBOÇO E DIMENSÕES DO CASO

Direct Fast Control Thyristors DCR1278

hirect fast control thyristors DCR1278
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